Conductance in Co ÕAl2O3 ÕSi ÕAl2O3 permalloy with asymmetrically doped barrier

نویسندگان

  • R. Guerrero
  • F. G. Aliev
  • R. Villar
  • T. Santos
  • J. Moodera
  • V. K. Dugaev
چکیده

R. Guerrero,1 F. G. Aliev,1,* R. Villar,1 T. Santos,2 J. Moodera,2 V. K. Dugaev,3,4 and J. Barnaś5,6 1Depto. de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, 28049 Madrid, Spain 2Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 3Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland 4Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon, Av. Rovisco Pais, 1049-001 Lisbon, Portugal 5Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland 6Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-197 Poznań, Poland Received 12 June 2009; revised manuscript received 16 October 2009; published 6 January 2010

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Conductance in Co|Al2O3|Si|Al2O3 Permalloy with asymmetrically doped barrier

Citation Guerrero, R. et al. "Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

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تاریخ انتشار 2010